JANS2N2221AUA
ZENER DIODEManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation JANS2N2221AUA is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/255, features a breakdown voltage of 50V and a maximum collector current of 800mA. Its DC current gain (hFE) is a minimum of 40 at 150mA and 10V. The device dissipates a maximum power of 650mW and operates within an extended temperature range of -65°C to 200°C. Packaged in a 4-SMD, No Lead (UA) for surface mounting, it is supplied in bulk. Applications include aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |
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