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JAN2N5014

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JAN2N5014

TRANS NPN 900V 0.2A TO5

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microsemi Corporation JAN2N5014 is a military-grade NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component, housed in a TO-205AA (TO-5-3) metal can package, offers a collector-emitter breakdown voltage of 900V and a continuous collector current capability of 200mA. It features a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 30 at 20mA and 10V. The device exhibits a low collector cutoff current (ICBO) of 10nA and operates across a wide temperature range from -65°C to 200°C. This transistor meets the stringent requirements of MIL-PRF-19500/727 qualification. The JAN2N5014 is commonly employed in power supply regulation, switching circuits, and high-voltage amplification stages within aerospace, defense, and industrial equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Frequency - Transition-
Supplier Device PackageTO-5AA
GradeMilitary
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)900 V
Power - Max1 W
QualificationMIL-PRF-19500/727

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