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JAN2N1489

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JAN2N1489

TRANS NPN 40V 6A TO3

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microsemi Corporation JAN2N1489 is an NPN bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and a continuous collector current capability of 6A. This device exhibits a minimum DC current gain (hFE) of 25 at 1.5A and 4V, with a Vce saturation of 3V at 300mA and 1.5A. The JAN2N1489 is rated for a maximum power dissipation of 75W and operates at junction temperatures up to 200°C. It is supplied in a TO-204AD (TO-3) package for through-hole mounting. This military-grade component, qualified to MIL-PRF-19500/208, finds application in demanding environments across aerospace and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 300mA, 1.5A
Current - Collector Cutoff (Max)25µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1.5A, 4V
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max75 W
QualificationMIL-PRF-19500/208

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