2N6382
PNP TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N6382 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a robust TO-63 stud mount package, ensuring efficient thermal management and reliable operation. With a maximum collector current (Ic) of 50 A and a collector-emitter breakdown voltage (Vce) of 120 V, the 2N6382 is capable of handling significant power dissipation up to 250 W. Its construction is well-suited for power switching, linear amplification, and motor control circuits across various industrial sectors, including aerospace, defense, and industrial automation. The TO-63 package facilitates easy integration into power supply designs and high-current switching applications.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 250 W |
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