2N5097
TRANS NPN 600V 1A TO5Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N5097 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current capability of 1 A. Dissipating up to 4 W, the 2N5097 is housed in a TO-205AA (TO-5-3 Metal Can) package. This device is suitable for use in power switching and linear amplification circuits across various industrial applications requiring robust high-voltage performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 4 W |
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