2N5015S
TRANS NPN 1000V 0.2A TO39Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation NPN Bipolar Junction Transistor, part number 2N5015S. This through-hole device, housed in a TO-39 (TO-205AD) metal can package, features a collector-emitter breakdown voltage of 1000V and a maximum continuous collector current of 200mA. With a power dissipation of 1W and a minimum DC current gain (hFE) of 30 at 20mA and 10V, this transistor is rated for military grade applications. The operating temperature range is from -65°C to 200°C. Key specifications include a Vce(sat) of 1.8V at 5mA base current and 20mA collector current, and an ICBO of 10nA. This component is qualified to MIL-PRF-19500/727.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 5mA, 20mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/727 |
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