2N5014
TRANS NPN 900V 0.2A TO5Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N5014 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 900V and a continuous collector current capability of 200mA, with a maximum power dissipation of 1W. It is housed in a TO-5AA (TO-205AA) metal can package, suitable for through-hole mounting. Key electrical parameters include a minimum DC current gain (hFE) of 30 at 20mA and 10V, and a collector cutoff current (ICBO) of 10nA. The operating temperature range is from -65°C to 200°C. This transistor is utilized in various industrial sectors, including aerospace, defense, and high-voltage power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Power - Max | 1 W |
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