2N5013
TRANS NPN 800V 0.2A TO5Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation 2N5013 is an NPN bipolar junction transistor (BJT) designed for high-voltage applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, features a maximum collector-emitter breakdown voltage of 800 V and a continuous collector current capability of 200 mA. With a maximum power dissipation of 1 W and a junction temperature range of -65°C to 200°C, the 2N5013 exhibits a minimum DC current gain (hFE) of 30 at 20 mA and 10 V. The collector cutoff current (ICBO) is specified at a maximum of 10 nA. This device is suitable for use in power supply circuits, high-voltage switching, and general-purpose amplification across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 800 V |
| Power - Max | 1 W |
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