2N5012
TRANS NPN 700V 0.2A TO5Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N5012 is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a 700 V collector-emitter breakdown voltage, making it suitable for power switching and amplification circuits where significant voltage headroom is required. With a continuous collector current capability of 200 mA and a maximum power dissipation of 1 W, the 2N5012 offers robust performance in a TO-5AA (TO-205AA) metal can package. It exhibits a minimum DC current gain (hFE) of 30 at 25 mA and 10 V. The device operates across a wide temperature range from -65°C to 200°C. This transistor is commonly utilized in industrial control systems, power supplies, and high-frequency circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
| Power - Max | 1 W |
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