2N5011
NPN SILICON TRANSISTORManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Bipolar (BJT) Transistor NPN 600 V 200 mA 1 W Through Hole TO-5AA
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 5mA, 25mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 1 W |
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