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2N3251AUB

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2N3251AUB

TRANS PNP 60V 0.2A UB

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

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Microsemi Corporation's 2N3251AUB is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 200mA. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage. With a maximum power dissipation of 360mW and an operating junction temperature range of -65°C to 200°C, it is suitable for demanding environments. The transistor is housed in a 3-SMD, No Lead surface-mount package (UB) and is supplied in bulk packaging. The 2N3251AUB finds application in various electronic systems, including industrial control and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max360 mW

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