2N3251AUB
TRANS PNP 60V 0.2A UBManufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N3251AUB is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 200mA. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage. With a maximum power dissipation of 360mW and an operating junction temperature range of -65°C to 200°C, it is suitable for demanding environments. The transistor is housed in a 3-SMD, No Lead surface-mount package (UB) and is supplied in bulk packaging. The 2N3251AUB finds application in various electronic systems, including industrial control and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
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