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2N3251A

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2N3251A

TRANS PNP 60V 0.2A TO39

Manufacturer: Microsemi Corporation

Categories: Single Bipolar Transistors

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Microsemi Corporation's 2N3251A is a PNP bipolar junction transistor designed for applications requiring reliable switching and amplification. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current (Ic) of 200mA. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce(sat) of 500mV at 5mA base current and 50mA collector current. With a maximum power dissipation of 360mW, the 2N3251A is packaged in a TO-39 (TO-205AD) metal can, suitable for through-hole mounting. Its operating temperature range is from -65°C to 200°C. This device finds utility in various industrial and commercial electronics, including power supply regulation and general-purpose amplification.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max360 mW

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