2N3251A
TRANS PNP 60V 0.2A TO39Manufacturer: Microsemi Corporation
Categories: Single Bipolar Transistors
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Microsemi Corporation's 2N3251A is a PNP bipolar junction transistor designed for applications requiring reliable switching and amplification. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current (Ic) of 200mA. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce(sat) of 500mV at 5mA base current and 50mA collector current. With a maximum power dissipation of 360mW, the 2N3251A is packaged in a TO-39 (TO-205AD) metal can, suitable for through-hole mounting. Its operating temperature range is from -65°C to 200°C. This device finds utility in various industrial and commercial electronics, including power supply regulation and general-purpose amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
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