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APTGV15H120T3G

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APTGV15H120T3G

IGBT MODULE 1200V 25A 115W SP3

Manufacturer: Microsemi Corporation

Categories: IGBT Modules

Quality Control: Learn More

Microsemi Corporation APTGV15H120T3G is an IGBT module featuring a Full Bridge Inverter configuration. This NPT, Trench Field Stop technology device offers a maximum collector-emitter voltage of 1200 V and a continuous collector current of 25 A. It provides a maximum power dissipation of 115 W and a gate-emitter voltage of 15V, resulting in a low on-state voltage drop of 2.1V at 15A. The module includes an integrated NTC thermistor for temperature monitoring and is designed for chassis mounting within the SP3 package. It is suitable for demanding applications across industries such as industrial motor drives, renewable energy systems, and power factor correction. The input capacitance (Cies) is 1.1 nF at 25 V. Operating temperature range is from -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP3
Mounting TypeChassis Mount
InputStandard
ConfigurationFull Bridge Inverter
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A
NTC ThermistorYes
Supplier Device PackageSP3
IGBT TypeNPT, Trench Field Stop
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max115 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce1.1 nF @ 25 V

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