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APTGT75TA60PG

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APTGT75TA60PG

IGBT MODULE 600V 100A 250W SP6P

Manufacturer: Microsemi Corporation

Categories: IGBT Modules

Quality Control: Learn More

The Microsemi Corporation APTGT75TA60PG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This three-phase module features a 600 V collector-emitter breakdown voltage and a 100 A continuous collector current rating. With a maximum power dissipation of 250 W and a low on-state voltage of 1.9V at 15V gate-emitter voltage and 75A collector current, it offers efficient power switching. The module has an input capacitance (Cies) of 4.62 nF at 25V and operates across a wide temperature range of -40°C to 175°C (TJ). Its robust SP6-P package with chassis mount facilitates thermal management in demanding environments. This component is commonly utilized in industrial automation, motor drives, and power generation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP6
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 75A
NTC ThermistorNo
Supplier Device PackageSP6-P
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max250 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce4.62 nF @ 25 V

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