APTGT75A170D1G
IGBT MODULE 1700V 120A 520W D1Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation APTGT75A170D1G is a Trench Field Stop IGBT module featuring a Half Bridge configuration. This component offers a 1700 V collector-emitter breakdown voltage, supporting up to 120 A collector current (Ic) at a maximum power dissipation of 520 W. The module exhibits a Vce(on) of 2.4 V at 15 V gate-emitter voltage and 75 A collector current, with a typical input capacitance (Cies) of 6.5 nF at 25 V. Designed for chassis mounting, the APTGT75A170D1G is suitable for applications in industrial motor drives and power conversion systems. The component is supplied in bulk packaging with a D1 case.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | D1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
| Power - Max | 520 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 6.5 nF @ 25 V |
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