APTGT75A1202G
IGBT MODULE 1200V 110A 357W SP2Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation's APTGT75A1202G is a Trench Field Stop Half Bridge IGBT module. This component offers a robust 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 110 A. It features a maximum power dissipation of 357 W and a low on-state voltage of 2.1V at 15V gate-emitter voltage and 75A collector current. The module is designed for chassis mounting in the SP2 package. Key specifications include a typical input capacitance of 5.34 nF at 25 V and an operating temperature range of -40°C to 150°C. This device is suitable for applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP2 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | SP2 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 357 W |
| Current - Collector Cutoff (Max) | 50 µA |
| Input Capacitance (Cies) @ Vce | 5.34 nF @ 25 V |
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