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APTGT50DH120T3G

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APTGT50DH120T3G

IGBT MODULE 1200V 75A 277W SP3

Manufacturer: Microsemi Corporation

Categories: IGBT Modules

Quality Control: Learn More

Microsemi Corporation APTGT50DH120T3G is a Trench Field Stop IGBT Module featuring an asymmetrical bridge configuration. This component is rated for a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A. The module offers a maximum power dissipation of 277 W and a Vce(on) of 2.1V at 15V gate-emitter voltage and 50A collector current. Input capacitance (Cies) is specified at 3.6 nF @ 25 V. The APTGT50DH120T3G includes an integrated NTC thermistor for thermal monitoring and is designed for chassis mounting in the SP3 package. It is suitable for applications in industrial motor drives and power conversion systems. The operating temperature range is -40°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP3
Mounting TypeChassis Mount
InputStandard
ConfigurationAsymmetrical Bridge
Operating Temperature-40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
NTC ThermistorYes
Supplier Device PackageSP3
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max277 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce3.6 nF @ 25 V

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