APTGT50A1202G
IGBT MODULE 1200V 75A 277W SP2Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation APTGT50A1202G is a Trench Field Stop IGBT module designed for high-power applications. This half-bridge configuration offers a 1200V collector-emitter breakdown voltage and a continuous collector current of 75A at a maximum power dissipation of 277W. Key parameters include a Vce(on) of 2.1V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 3.6 nF @ 25V. The module features a low collector cutoff current of 50 µA and operates within an ambient temperature range of -40°C to 150°C (TJ). Mounting is via chassis mount, and the package type is SP2. This component is suitable for industries requiring robust power switching, such as industrial motor drives and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP2 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| NTC Thermistor | No |
| Supplier Device Package | SP2 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 277 W |
| Current - Collector Cutoff (Max) | 50 µA |
| Input Capacitance (Cies) @ Vce | 3.6 nF @ 25 V |
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