APTGT100A120D1G
IGBT MODULE 1200V 150A 520W D1Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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The Microsemi Corporation APTGT100A120D1G is a Trench Field Stop Half Bridge IGBT module. This component offers a 1200V collector-emitter breakdown voltage and a maximum collector current of 150A. It features a low on-state voltage of 2.1V at 15V gate-emitter voltage and 100A collector current, with an input capacitance (Cies) of 7 nF at 25V. The module has a maximum power dissipation of 520W and is designed for chassis mounting in the D1 package. This device is commonly utilized in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| NTC Thermistor | No |
| Supplier Device Package | D1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 520 W |
| Current - Collector Cutoff (Max) | 3 mA |
| Input Capacitance (Cies) @ Vce | 7 nF @ 25 V |