APTGL90SK120T1G
IGBT MODULE 1200V 110A 385W SP1Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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The Microsemi Corporation APTGL90SK120T1G is a high-performance Insulated Gate Bipolar Transistor (IGBT) module. This single-configuration device features Trench Field Stop IGBT technology, offering a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 110 A. With a maximum power dissipation of 385 W, it is designed for demanding applications. The module boasts a low collector-emitter saturation voltage (Vce(on)) of 2.25V at 15V gate-emitter voltage and 75A collector current, contributing to reduced conduction losses. Input capacitance (Cies) is 4.4 nF at 25V, and the NTC thermistor integrated within the package facilitates temperature monitoring. Operating across a wide temperature range of -40°C to 175°C (TJ), this chassis mount module, packaged in SP1, is suitable for power conversion systems in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 75A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP1 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 385 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 4.4 nF @ 25 V |
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