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APTGL60DH120T3G

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APTGL60DH120T3G

IGBT MODULE 1200V 80A 280W SP3

Manufacturer: Microsemi Corporation

Categories: IGBT Modules

Quality Control: Learn More

The Microsemi Corporation APTGL60DH120T3G is an IGBT Module featuring Trench Field Stop technology, configured as an asymmetrical bridge. This chassis-mount module offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 80 A. With a maximum power dissipation of 280 W, it is engineered for demanding applications. The module exhibits a Vce(on) of 2.25V at 15V Vge and 50A Ic, and an input capacitance (Cies) of 2.77 nF at 25V. An integrated NTC thermistor facilitates thermal management. Operating within a junction temperature range of -40°C to 175°C, this device is suitable for power conversion systems in industrial and renewable energy sectors. The package type is SP3, supplied in bulk.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP3
Mounting TypeChassis Mount
InputStandard
ConfigurationAsymmetrical Bridge
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2.25V @ 15V, 50A
NTC ThermistorYes
Supplier Device PackageSP3
IGBT TypeTrench Field Stop
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max280 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce2.77 nF @ 25 V

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