APTGL325DA120D3G
IGBT MODULE 1200V 420A 1500W D3Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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The Microsemi Corporation APTGL325DA120D3G is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module designed for high-power applications. This component features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 420 A. It offers a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 300A collector current, contributing to reduced conduction losses. The module is rated for a maximum power dissipation of 1500 W and operates across a wide temperature range of -40°C to 175°C. Its D3 package with chassis mount facilitates robust thermal management in demanding environments. This IGBT module is suitable for use in power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-3 Module |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 300A |
| NTC Thermistor | No |
| Supplier Device Package | D3 |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 420 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 1500 W |
| Current - Collector Cutoff (Max) | 5 mA |
| Input Capacitance (Cies) @ Vce | 18.6 nF @ 25 V |