APTGF660U60D4G
IGBT MODULE 600V 860A 2800W D4Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation APTGF660U60D4G is a high-power NPT single IGBT module designed for demanding applications. This component features a robust 600 V collector-emitter breakdown voltage and a maximum collector current capability of 860 A, with a power dissipation rating of 2800 W. The module exhibits a low on-state voltage (Vce(on)) of 2.45 V at 15 V gate-emitter voltage and 800 A collector current. Its input capacitance (Cies) is specified at 36 nF at 25 V. The device is configured as a single IGBT and is provided in Bulk packaging with a D4 case suitable for chassis mounting. This IGBT module is commonly utilized in industrial automation, renewable energy systems, and power conversion applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D4 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 800A |
| NTC Thermistor | No |
| Supplier Device Package | D4 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 860 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Power - Max | 2800 W |
| Current - Collector Cutoff (Max) | 500 µA |
| Input Capacitance (Cies) @ Vce | 36 nF @ 25 V |
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