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APTGF50TA120PG

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APTGF50TA120PG

IGBT MODULE 1200V 75A 312W SP6P

Manufacturer: Microsemi Corporation

Categories: IGBT Modules

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Microsemi Corporation APTGF50TA120PG is an NPT (Non-Punch Through) IGBT module featuring a three-phase configuration. This component is rated for a collector-emitter breakdown voltage of 1200 V and a continuous collector current of up to 75 A. The module offers a maximum power dissipation of 312 W and a Vce(on) of 3.7 V at 15 V gate-emitter voltage and 50 A collector current. Input capacitance (Cies) is specified at 3.45 nF at 25 V. The APTGF50TA120PG is designed for chassis mounting and utilizes the SP6-P package. It is suitable for applications in industrial motor drives, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSP6
Mounting TypeChassis Mount
InputStandard
ConfigurationThree Phase
Operating Temperature-
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
NTC ThermistorNo
Supplier Device PackageSP6-P
IGBT TypeNPT
Current - Collector (Ic) (Max)75 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Power - Max312 W
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce3.45 nF @ 25 V

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