APTGF25A120T1G
IGBT MODULE 1200V 40A 208W SP1Manufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation's APTGF25A120T1G is a robust NPT IGBT module featuring a Half Bridge configuration. This component is designed for high-voltage applications, with a maximum Collector-Emitter Voltage (Vce) breakdown of 1200 V and a continuous Collector Current (Ic) of 40 A. The module offers a significant power dissipation capability of 208 W and exhibits a low on-state voltage (Vce(on)) of 3.7V at 15V Gate-Emitter Voltage (Vge) and 25A Collector Current (Ic). It includes an integrated NTC thermistor for thermal monitoring and is presented in a chassis mountable SP1 package. This IGBT module is suitable for power conversion systems in industries such as industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Half Bridge |
| Operating Temperature | - |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 25A |
| NTC Thermistor | Yes |
| Supplier Device Package | SP1 |
| IGBT Type | NPT |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 208 W |
| Current - Collector Cutoff (Max) | 250 µA |
| Input Capacitance (Cies) @ Vce | 1.65 nF @ 25 V |