APT75GN120JDQ3G
IGBT MOD 1200V 124A 379W ISOTOPManufacturer: Microsemi Corporation
Categories: IGBT Modules
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Microsemi Corporation APT75GN120JDQ3G is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) module, rated for 1200 V collector-emitter breakdown voltage and a continuous collector current of 124 A. This module features a low Vce(on) of 2.1V at 15V Vge and 75A Ic, with an input capacitance (Cies) of 4.8 nF at 25 V. The APT75GN120JDQ3G offers a maximum power dissipation of 379 W and operates across a wide temperature range of -55°C to 150°C (TJ). It utilizes the ISOTOP® package for chassis mounting and is designed for demanding applications in industrial motor drives, renewable energy systems, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOTOP |
| Mounting Type | Chassis Mount |
| Input | Standard |
| Configuration | Single |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| NTC Thermistor | No |
| Supplier Device Package | ISOTOP® |
| IGBT Type | Trench Field Stop |
| Current - Collector (Ic) (Max) | 124 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Power - Max | 379 W |
| Current - Collector Cutoff (Max) | 200 µA |
| Input Capacitance (Cies) @ Vce | 4.8 nF @ 25 V |
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