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W7NCF512H30ISBEG

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W7NCF512H30ISBEG

Flash Card, 32MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

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Microsemi Corporation presents the W7NCF512H30ISBEG, a Flash Card memory component from the W7NCF512H30 series. This device offers a memory density of 536,870,912 bits, organized as 32M words by 16 bits. Featuring synchronous operation and a parallel interface, it delivers a maximum access time of 150 nanoseconds. The component supports a programming voltage of 3.3V, with a supply voltage range of 3.0V to 3.6V and is also compatible with 5V operation. It operates across an industrial temperature range of -40°C to +85°C. This microelectronic assembly, coded R-XXMA-X50, is suitable for applications in industrial automation, telecommunications, and embedded systems requiring robust non-volatile storage. The technology employed is CMOS.

Additional Information

Series: W7NCF512H30RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.8000
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density536870912.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization32MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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