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W7NCF128H11ISBDG

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W7NCF128H11ISBDG

Flash Card, 8MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

Quality Control: Learn More

The Microsemi Corporation W7NCF128H11ISBDG is a 128Mbit (8M x 16) Parallel Flash Memory Card from the W7NCF128H11 series. This component features a maximum access time of 150ns and operates at a 3.3V programming voltage, with 5V operation also supported. The memory is organized as 8M words by 16 bits, offering a raw density of 134,217,728 bits. Its operating temperature range is from -40°C to +85°C. This high-performance memory solution is suitable for demanding applications in industrial control, telecommunications, and defense systems where reliable data storage is critical. The component utilizes CMOS technology and is packaged as a microelectronic assembly with a rectangular shape.

Additional Information

Series: W7NCF128H11RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Length42.8000
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density134217728.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization8MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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