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W7NCF08GH30ISBJG

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W7NCF08GH30ISBJG

Flash Card, 512MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

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The Microsemi Corporation W7NCF08GH30ISBJG is an 8 Gbit (512M x 16) parallel Flash Card memory device from the W7NCF08GH30 series. This component offers a synchronous operating mode with a maximum access time of 150 ns. It operates from a supply voltage range of 3.0 V to 3.6 V, with a nominal voltage of 3.3 V, and supports 5 V operation. The device features a parallel interface and is constructed using CMOS technology. This W7NCF08GH30ISBJG is suitable for applications requiring high-density, non-volatile storage, commonly found in industrial computing, telecommunications infrastructure, and embedded systems. The memory organization is 512M x 16 bits, providing 8,589,934,592 bits of storage. Operating temperature ranges from -40 °C to +85 °C.

Additional Information

Series: W7NCF08GH30RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Length42.8000
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density8589934592.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization512MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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