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W7NCF08GH30ISA3EM1G

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W7NCF08GH30ISA3EM1G

Flash Card, 512MX16, 250ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

Quality Control: Learn More

Microsemi Corporation W7NCF08GH30ISA3EM1G is a Flash memory component from the W7NCF08 series. This component features an 8 Gigabit memory density with a 512M x 16 memory organization, offering 8,589,934,592 words. It operates in synchronous mode with a maximum access time of 250ns. The device supports a supply voltage range of 3.0V to 3.6V, with a nominal operating voltage of 3.3V, and is also compatible with 4.5V to 5.5V supplies. Designed for industrial applications, it operates across a temperature range of -40°C to +85°C. The component is a rectangular microelectronic assembly with 50 terminals and utilizes CMOS technology. This Flash card is suitable for applications requiring robust non-volatile storage.

Additional Information

Series: W7NCF08RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.8000
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Access_Time_Max250.0000000000000000
Additional_FeatureIT ALSO OPERATES WITH 4.5V TO 5.5V SUPPLY
JESD_30_CodeR-XXMA-X50
Memory_Density8589934592.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization512MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words8589934592.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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