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W7NCF08GH30IS9DG

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W7NCF08GH30IS9DG

Flash Card, 512MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

Quality Control: Learn More

The Microsemi Corporation W7NCF08GH30IS9DG is a Flash Card component featuring a 512M x 16 memory organization, providing a total memory density of 8 Gbit. This component operates with a synchronous interface and supports a programming voltage of 3.3 V, with a nominal supply voltage of 3.3 V and a maximum of 3.6 V, while also offering 5 V operation capability. Its maximum access time is 150 ns. The W7NCF08GH30IS9DG is designed for industrial applications, operating across a temperature range of -40°C to +85°C. This component is utilized in sectors such as industrial automation, telecommunications infrastructure, and embedded systems requiring robust non-volatile storage. The memory type is SLC NAND.

Additional Information

Series: W7NCF08GH30RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.8000
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density8589934592.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization512MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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