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W7NCF08GH11IS4EG

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W7NCF08GH11IS4EG

Flash Card, 512MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

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Microsemi Corporation W7NCF08GH11IS4EG is an 8 Gbit (512M x 16) synchronous Flash memory card from the W7NCF08GH11 series. This component offers a maximum access time of 150ns and operates with a supply voltage of 3.0V to 3.6V, with a nominal 3.3V programming voltage. It supports 5V operation as an additional feature. The memory organization is 512M words by 16 bits, utilizing CMOS technology and an SLC NAND type. This device is suitable for applications requiring high density non-volatile storage, commonly found in industrial systems, telecommunications infrastructure, and embedded computing platforms. Its rectangular package style, identified by the XMA code, is designed for microelectronic assembly. The operating temperature range is -40°C to 85°C.

Additional Information

Series: W7NCF08GH11RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.8000
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density8589934592.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization512MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words536870912.0000000000000000
Number_of_Words_Code512M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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