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W7NCF02GH30IS9EG

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W7NCF02GH30IS9EG

Flash Card, 128MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

Quality Control: Learn More

Microsemi Corporation’s W7NCF02GH30IS9EG is a 2 Gbit parallel flash memory card with a 128M x 16 organization. This component offers a maximum access time of 150 ns and operates synchronously. The device supports a 3.3 V nominal supply voltage, with a range of 3.0 V to 3.6 V, and can also function with 5 V operation. Fabricated using CMOS technology, it features an SLC NAND type architecture. The W7NCF02GH30IS9EG is suitable for demanding applications in industrial control, telecommunications infrastructure, and embedded computing systems. Its robust design and specifications ensure reliable data storage and retrieval in challenging environments. The component is housed in a rectangular microelectronic assembly package.

Additional Information

Series: W7NCF02GH30RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Length42.8000
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density2147483648.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization128MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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