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W7NCF02GH21IS4EG

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W7NCF02GH21IS4EG

Flash Card, 128MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

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The Microsemi Corporation W7NCF02GH21IS4EG is a 2 Gbit (2147483648 bits) Flash memory card, organized as 128M words by 16 bits. This component operates with a synchronous parallel interface and features a maximum access time of 150ns. It supports a programming voltage of 3.3V, with supply voltage ranging from 3.0V to 3.6V. Additionally, 5V operation is supported. The component is designed for operation within an industrial temperature range of -40°C to +85°C. Applications for this memory technology include industrial control systems and embedded computing platforms requiring robust, high-density non-volatile storage. The W7NCF02GH21IS4EG utilizes CMOS technology and is presented in a rectangular microelectronic assembly package.

Additional Information

Series: W7NCF02GH21RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Length42.8000
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density2147483648.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization128MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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