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W7NCF01GH20IS8DG

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W7NCF01GH20IS8DG

Flash Card, 64MX16, 150ns

Manufacturer: Microsemi Corporation

Categories: Flash Memories

Quality Control: Learn More

Microsemi Corporation W7NCF01GH20IS8DG is a 1 Gbit (1073741824 bit) Synchronous Parallel Flash Card memory device from the W7NCF01GH20 series. This component features a memory organization of 64M words by 16 bits, providing a total capacity of 67108864 words. The device operates with a typical supply voltage of 3.3 V, supporting 5 V operation as well, with a maximum supply voltage of 3.6 V and a minimum of 3.0 V. It offers an access time of 150 ns. The W7NCF01GH20IS8DG utilizes CMOS technology and is designed for applications requiring robust data storage, commonly found in industrial, medical, and telecommunications sectors. This Flash Card memory component is housed in a Rectangular MICROELECTRONIC ASSEMBLY package.

Additional Information

Series: W7NCF01GH20RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.8000
TypeSLC NAND TYPE
Width36.4000
TechnologyCMOS
Access_Time_Max150.0000000000000000
Additional_Feature5 V OPERATION IS ALSO POSSIBLE
JESD_30_CodeR-XXMA-X50
Memory_Density1073741824.0000000000000000
Memory_IC_TypeFLASH Card
Memory_Organization64MX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals50
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeXMA
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Programming_Voltage3.3
Seated_Height_Max3.4000
Supply_Current_Max30.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionUNSPECIFIED

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