EDI784MSV50BM
Flash, 4MX8, 35ns, CDSO24Manufacturer: Microsemi Corporation
Categories: Flash Memories
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Microsemi Corporation's EDI784MSV50BM is a 4M x 8 Flash memory component featuring synchronous operation. This device offers a rapid 35ns access time and is fabricated using CMOS technology. The memory organization provides 4,194,304 words, each 8 bits wide, for a total density of 33,554,432 bits. Operating within a temperature range of -55°C to +125°C, it supports a supply voltage from 3.0V to 3.6V with a nominal value of 3.3V and requires a 3V programming voltage. The EDI784MSV50BM is housed in a 24-terminal Ceramic, Metal-Sealed Cofired Small Outline package (JESD-30 Code R-CDSO-G24) with gull-wing terminals on a 1.27mm pitch, suitable for surface mounting. This component finds application in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: EDI784MSV50RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 21.2090 |
| Width | 10.3124 |
| Technology | CMOS |
| Access_Time_Max | 35.0000000000000000 |
| JESD_30_Code | R-CDSO-G24 |
| Memory_Density | 33554432.0000000000000000 |
| Memory_IC_Type | FLASH |
| Memory_Organization | 4MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 24 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | SOP |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Programming_Voltage | 3 |
| Seated_Height_Max | 2.3114 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Gull Wing |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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