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5962-9669001HYX

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5962-9669001HYX

Flash, 128KX8, 150ns, CDIP32

Manufacturer: Microsemi Corporation

Categories: Flash Memories

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The Microsemi Corporation 5962-9669001HYX is a 128K x 8 CMOS NOR Flash memory device. Featuring an asynchronous operating mode and a maximum access time of 150ns, this component offers a memory density of 1Mbit. It is housed in a 32-lead ceramic dual in-line package (CDIP), adhering to the R-CDIP-T32 standard, with through-hole termination. The operating temperature range is from -55°C to +125°C, and it operates with a supply voltage between 4.5V and 5.5V, with a nominal value of 5V. This device is suitable for applications requiring high reliability and performance, often found in aerospace, defense, and industrial systems. The screening level is MIL-PRF-38534 Class H.

Additional Information

Series: 5962-9669001RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length42.4180
TypeNOR TYPE
Width15.2400
TechnologyCMOS
Access_Time_Max150.0000000000000000
JESD_30_CodeR-CDIP-T32
Memory_Density1048576.0000000000000000
Memory_IC_TypeFLASH
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals32
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDIP
Package_ShapeRectangular
Package_StyleIN-LINE
Parallel_SerialParallel
Programming_Voltage5
Screening_Level_Reference_StandardMIL-PRF-38534 Class H
Seated_Height_Max5.1308
Supply_Current_Max50.000000000000000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormTHROUGH-HOLE
Terminal_Pitch2.540
Terminal_PositionDual

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