JAN2N7335
MOSFET 4P-CH 100V 0.75A MO-036ABManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microsemi Corporation JAN2N7335 is a 4 P-channel MOSFET array designed for demanding applications. This through-hole component, housed in a 14-DIP package, features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 750mA at 25°C. The device exhibits a maximum on-resistance (Rds On) of 1.4 Ohms at 500mA and 10V, with a power dissipation of 1.4W. Qualified to MIL-PRF-19500/599 and designated as Military grade, it operates across an extended temperature range of -55°C to 150°C. This MOSFET array is suitable for use in aerospace, defense, and high-reliability industrial systems requiring robust switching performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | 4 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 750mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Grade | Military |
| Qualification | MIL-PRF-19500/599 |
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