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JAN2N7335

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JAN2N7335

MOSFET 4P-CH 100V 0.75A MO-036AB

Manufacturer: Microsemi Corporation

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Microsemi Corporation JAN2N7335 is a 4 P-channel MOSFET array designed for demanding applications. This through-hole component, housed in a 14-DIP package, features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 750mA at 25°C. The device exhibits a maximum on-resistance (Rds On) of 1.4 Ohms at 500mA and 10V, with a power dissipation of 1.4W. Qualified to MIL-PRF-19500/599 and designated as Military grade, it operates across an extended temperature range of -55°C to 150°C. This MOSFET array is suitable for use in aerospace, defense, and high-reliability industrial systems requiring robust switching performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case14-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Configuration4 P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.4W
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C750mA
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id4V @ 250µA
GradeMilitary
QualificationMIL-PRF-19500/599

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Microsemi Corporation - JAN2N7335 - Microchip USA