APTML202UM18R010T3AG
MOSFET 2N-CH 200V 109A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation's APTML202UM18R010T3AG is a 200V, 109A (Tc) dual N-channel MOSFET array designed for high-power applications. This component features a low on-resistance of 19mOhm at 50A and 10V, optimizing conduction losses. With a continuous drain current capability of 109A at 25°C and a maximum power dissipation of 480W, it is suitable for demanding thermal management solutions requiring chassis mounting. The device operates across a wide temperature range of -40°C to 150°C (TJ). It is supplied in Bulk packaging with the SP3 package. Applications include power factor correction, motor control, and power supply units within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 480W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 109A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 9880pF @ 25V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | SP3 |
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