APTML1002U60R020T3AG
MOSFET 2N-CH 1000V 20A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation's APTML1002U60R020T3AG is a dual N-channel MOSFET array designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1000V (1kV) and a continuous drain current (Id) of 20A at 25°C. The Rds On is specified at 720mOhm maximum at 10A and 10V. With a maximum power dissipation of 520W and an operating temperature range of -40°C to 150°C (TJ), this device is suitable for demanding environments. The input capacitance (Ciss) is 6000pF maximum at 25V. The APTML1002U60R020T3AG utilizes Metal Oxide MOSFET technology and is supplied in a Chassis Mount SP3 package, often used in bulk packaging. This component finds application in power conversion and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 520W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | SP3 |