APTMC120HR11CT3G
SIC 2N-CH 1200V 26A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTMC120HR11CT3G is a Silicon Carbide (SiC) MOSFET array featuring two N-channel enhancement mode transistors. This device offers a continuous drain current of 26A at a case temperature of 25°C and a drain-to-source voltage (Vdss) of 1200V (1.2kV). With a maximum power dissipation of 125W and a low on-resistance (Rds On) of 98mOhm at 20A and 20V, it is designed for high-efficiency applications. Key parameters include a gate charge (Qg) of 62nC (max) and input capacitance (Ciss) of 950pF (max). The APTMC120HR11CT3G is housed in an SP3 package for chassis mounting and operates across a temperature range of -40°C to 150°C (TJ). This component is suitable for demanding applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 125W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 5mA |
| Supplier Device Package | SP3 |
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