APTM60A23FT1G
MOSFET 2N-CH 600V 20A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM60A23FT1G is a 600V, 20A N-Channel MOSFET array designed for high-power applications. This component, housed in a Chassis Mount SP1 package, offers a continuous drain current of 20A at 25°C and a maximum power dissipation of 208W. Key electrical specifications include a Drain-Source Voltage (Vdss) of 600V, a low on-resistance (Rds On) of 276mOhm at 17A and 10V, and a gate charge (Qg) of 165nC at 10V. The input capacitance (Ciss) is 5316pF at 25V. Operating across a temperature range of -40°C to 150°C, this MOSFET array is suitable for use in power factor correction (PFC), motor control, and power supply applications across industrial and renewable energy sectors. The technology employed is Metal Oxide.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 5316pF @ 25V |
| Rds On (Max) @ Id, Vgs | 276mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP1 |
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