APTM50TDUM65PG
MOSFET 6N-CH 500V 51A SP6-PManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTM50TDUM65PG is a 6 N-channel MOSFET array featuring a 3-phase bridge configuration. This device offers a Drain-to-Source Voltage (Vdss) of 500V and a continuous Drain current (Id) of 51A at 25°C. With a maximum power dissipation of 390W and a low Rds(On) of 78mOhm at 25.5A and 10V, it is designed for high-efficiency power conversion. Key parameters include a Gate Charge (Qg) of 140nC (max) and Input Capacitance (Ciss) of 7000pF (max). The device is housed in a chassis mount SP6-P package, suitable for demanding thermal management. Applications include industrial power supplies, electric vehicle powertrains, and renewable energy systems. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 51A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 25.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP6-P |
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