APTM50DHM65T3G
MOSFET 2N-CH 500V 51A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation POWER MOS 8™ APTM50DHM65T3G is a 500V, 51A dual N-channel MOSFET array designed for high-power applications. This chassis mount device offers a continuous drain current of 51A at 25°C with a low on-resistance of 78mOhm at 42A and 10V. Featuring a maximum power dissipation of 390W, it is suitable for demanding environments. Key parameters include a gate charge of 340nC at 10V and an input capacitance of 10800pF at 25V. The APTM50DHM65T3G operates within a temperature range of -40°C to 150°C and is supplied in Bulk packaging within the SP3 case. This component is utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 51A |
| Input Capacitance (Ciss) (Max) @ Vds | 10800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 42A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 340nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP3 |
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