APTM50DHM35G
MOSFET 2N-CH 500V 99A SP6Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM50DHM35G is a 500V, 99A dual N-channel MOSFET array designed for high-power applications. This component, housed in an SP6 chassis mount package, offers a low on-resistance of 39mOhm at 49.5A and 10V, enabling efficient power conversion. With a maximum continuous drain current of 99A and a power dissipation of 781W, it is suitable for demanding thermal management. Key electrical characteristics include a typical input capacitance (Ciss) of 14000pF at 25V and a gate charge (Qg) of 280nC at 10V. The operating temperature range is -40°C to 150°C. This MOSFET array finds application in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 781W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 99A |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 49.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP6 |
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