APTM50AM70FT1G
MOSFET 2N-CH 500V 50A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM50AM70FT1G is a 500V, 2 N-Channel MOSFET array designed for high-power applications. This device features a continuous drain current capability of 50A at 25°C and a maximum power dissipation of 390W. The Rds On is specified at 84mOhm maximum at 42A and 10V Vgs. Key parameters include a gate charge (Qg) of 340nC maximum at 10V and an input capacitance (Ciss) of 10800pF maximum at 25V Vds. The APTM50AM70FT1G utilizes MOSFET technology and is supplied in a chassis mount SP1 package. It operates across a temperature range of -40°C to 150°C (TJ). This component is commonly found in power factor correction, motor control, and industrial power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 10800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 84mOhm @ 42A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 340nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |