APTM50AM19STG
MOSFET 2N-CH 500V 170A SP4Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTM50AM19STG is a 2 N-Channel Silicon Carbide (SiC) MOSFET array designed for high-power applications. This component features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 170A at 25°C. The APTM50AM19STG offers a low on-resistance of 19mOhm at 85A and 10V (Vgs), contributing to efficient power handling with a maximum power dissipation of 1250W. Key parameters include a gate charge (Qg) of 492nC at 10V and input capacitance (Ciss) of 22400pF at 25V. This chassis-mount device operates across a temperature range of -40°C to 150°C (TJ) and is presented in an SP4 package. Its configuration as a half-bridge makes it suitable for power conversion systems in industries such as electric vehicle charging, industrial motor drives, and renewable energy.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1250W |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 170A |
| Input Capacitance (Ciss) (Max) @ Vds | 22400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 85A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 492nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP4 |
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