APTM20DUM10TG
MOSFET 2N-CH 200V 175A SP4Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The APTM20DUM10TG from Microsemi Corporation is a dual N-channel MOSFET array designed for high-power applications. This component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 175A at 25°C. With a low on-resistance (Rds On) of 12mOhm at 87.5A and 10V, and a maximum power dissipation of 694W, it is optimized for efficiency. The device offers a gate charge (Qg) of 224nC (max) at 10V and an input capacitance (Ciss) of 13700pF (max) at 25V. It is housed in an SP4 package for chassis mounting and operates within a temperature range of -40°C to 150°C. This MOSFET array finds application in power factor correction, motor control, and power supply solutions across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 694W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 175A |
| Input Capacitance (Ciss) (Max) @ Vds | 13700pF @ 25V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 87.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 224nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |
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