APTM20DUM05TG
MOSFET 2N-CH 200V 333A SP4Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM20DUM05TG is a dual N-channel MOSFET array designed for high-power applications. This component offers a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 333A at 25°C. The low on-resistance of 5mOhm at 166.5A and 10V Vgs, coupled with a maximum power dissipation of 1250W, makes it suitable for demanding power conversion and control systems. Key parameters include a gate charge (Qg) of 1184nC and input capacitance (Ciss) of 40800pF. The device features chassis mount packaging (SP4) for efficient thermal management, operating across a temperature range of -40°C to 150°C. This MOSFET array is commonly employed in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1250W |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 333A |
| Input Capacitance (Ciss) (Max) @ Vds | 40800pF @ 25V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 166.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1184nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SP4 |
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