APTM120TDU57PG
MOSFET 6N-CH 1200V 17A SP6-PManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM120TDU57PG is a 1200V N-Channel MOSFET array designed for high-power applications. This component features a 6-transistor configuration, suitable for 3-phase bridge configurations. Each MOSFET offers a continuous drain current of 17A at 25°C and a maximum power dissipation of 390W. Key electrical parameters include a maximum Rds(on) of 684mOhms at 8.5A and 10V, an input capacitance (Ciss) of 5155pF at 25V, and a gate charge (Qg) of 187nC at 10V. The APTM120TDU57PG utilizes Metal Oxide MOSFET technology and is housed in a chassis mountable SP6-P package. This component is typically employed in industrial power conversion, electric vehicle powertrains, and renewable energy systems. Operating temperature ranges from -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 17A |
| Input Capacitance (Ciss) (Max) @ Vds | 5155pF @ 25V |
| Rds On (Max) @ Id, Vgs | 684mOhm @ 8.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 187nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP6-P |
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